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Datasheet 1SS383 Equivalent ( PDF ) - Diode |
| P/N | Descripción | Fabr. | |
| 1SS383 | Silicon epitaxial planar type diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383
1SS383
Low Voltage High Speed Switching
Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current
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1SS3 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 1SS300 | SILICON EPITAXIAL PLANAR DIODE
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| 1SS301 | DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
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| 1SS302 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
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| 1SS306 | SILICON EPITAXIAL PLANAR DIODE
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| 1SS307 | DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)
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| 1SMB28AT3G | 28V 600W Power Zener TVS Diode
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| 1SS511WS | Switching Diode
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| Esta página es del resultado de búsqueda del 1SS383. Si pulsa el resultado de búsqueda de 1SS383 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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| P/N | Descripción | Fabr. | |
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