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1SS383 PDF File ( Datasheet )

Toshiba
1SS383(TE85L,F)
Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.1A, 45V V(RRM), Silicon

PDF Datasheet
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1SS383 Description
Silicon epitaxial planar type diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 45 40 300 * 1
Toshiba Semiconductor
Toshiba Semiconductor



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