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Datasheet 12NK90Z Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
112NK90ZSTW12NK90Z

STW12NK90Z N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW12NK90Z VDSS 900V RDS(on) <0.88Ω ID pW 11A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intr
STMicroelectronics
STMicroelectronics
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12N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
112N035N-Channel Field Effect Transistor

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 12N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other b
BL
BL
datasheet 12N035 pdf
212N06Z12A 60V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N06Z 12A, 60V N-CHAN NEL POWER MOSFET „ DESCRIPTION 1 Power MOSFET The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low g
UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
datasheet 12N06Z pdf
312N10N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and le
Unisonic Technologies
Unisonic Technologies
datasheet 12N10 pdf
412N10PN-CHANNEL MOSFET

12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA 
CHONGQING PINGYANG
CHONGQING PINGYANG
datasheet 12N10P pdf
512N18N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N18 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
datasheet 12N18 pdf
612N20N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N20 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
datasheet 12N20 pdf
712N25N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N25 12A, 250V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance a
Unisonic Technologies
Unisonic Technologies
datasheet 12N25 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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