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IXTA182N055T Buy Now and Stock Informations |
IXTA182N055T Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IXTA182N055T | Power MOSFET, Transistor IXYS Corporation mosfet | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXTA110N055P | PolarHT Power MOSFET IXYS Corporation | ||
2 | IXTA1N80 | High Voltage MOSFET IXYS | ||
3 | IXTA16N50P | PolarHV Power MOSFET IXYS | ||
4 | IXTA14N60P | PolarHV Power MOSFET IXYS |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXTA182N055T | Power MOSFET, Transistor Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA182N055T IXTP182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 182 5.0
V A mΩ
Symbol
VDSS VDGR VGS IXYS Corporation | ||
2 | IXTA182N055T7 | Power MOSFET, Transistor Preliminary Technical Information
TrenchMVTM
IXTA182N055T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 182 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRM IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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