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IXTA130N10T7 Buy Now and Stock Informations |
IXTA130N10T7 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IXTA130N10T7 | Power MOSFET, Transistor IXYS Corporation mosfet | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXTA110N055P | PolarHT Power MOSFET IXYS Corporation | ||
2 | IXTA1N80 | High Voltage MOSFET IXYS | ||
3 | IXTA16N50P | PolarHV Power MOSFET IXYS | ||
4 | IXTA14N60P | PolarHV Power MOSFET IXYS |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXTA130N10T | Power MOSFET, Transistor TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD IXYS Corporation | ||
2 | IXTA130N10T7 | Power MOSFET, Transistor TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL T
SOLD
Weig IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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