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ESAD83M-006RR Buy Now and Stock Informations |
ESAD83M-006RR Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | ESAD83M-006RR | SCHOTTKY BARRIER DIODE Fuji Electric diode | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | ESAD83M-004 | SCHOTTKY BARRIER DIODE Fuji Electric | ||
2 | ESAD83M-006 | SCHOTTKY BARRIER DIODE Fuji Electric | ||
3 | ESAD85-009 | SCHOTTKY BARRIER DIODE Fuji Electric | ||
4 | ESAD85M-009 | SCHOTTKY BARRIER DIODE Fuji Electric |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | ESAD83M-006R | SCHOTTKY BARRIER DIODE ESAD83M-006R (30A)
SCHOTTKY BARRIER DIODE
15.5 ±0.3
5.5 ±0.2
(60V / 30A )
Outline drawings, mm
ø3.2 ±0.2
9.3 ±0.3
5.5
±0.3
3.2 +0.3
2.3 ±0.2
2.1±0.3
1.6 ±0.3 1.1 —0.1
+0.2
20 Min
Fuji Electric | ||
2 | ESAD83M-006RR | SCHOTTKY BARRIER DIODE http://www.fujisemi.com
ESAD83M-006RR
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item Repetitive peak reverse voltage Isolatin Fuji Electric |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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