BS616UV1010AI Buy Now and Stock Informations

BS616UV1010AI Electronic Components

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BS616UV1010AI	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit	Brilliance Semiconductor	ram

PDF BS616UV1010AI Data sheet ( Hoja de datos )

Electronic components

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS616LV1010AI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	Brilliance Semiconductor
2	BS616LV1010EC	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	Brilliance Semiconductor
3	BS616LV1010EI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	Brilliance Semiconductor
4	BS616LV1623	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable	ETC

Featured electronic components

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS616UV1010AC	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 DESCRIPTION The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 w	Brilliance Semiconductor
2	BS616UV1010AI	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 DESCRIPTION The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 w	Brilliance Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
2SC1815	NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request	Semtech	PDF

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