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BS616LV2021DI Buy Now and Stock Informations |
BS616LV2021DI Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BS616LV2021DI | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Brilliance Semiconductor ram | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BS616LV1010AI | Very Low Power/Voltage CMOS SRAM 64K X 16 bit Brilliance Semiconductor | ||
2 | BS616LV1010EC | Very Low Power/Voltage CMOS SRAM 64K X 16 bit Brilliance Semiconductor | ||
3 | BS616LV1010EI | Very Low Power/Voltage CMOS SRAM 64K X 16 bit Brilliance Semiconductor | ||
4 | BS616LV1623 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable ETC |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BS616LV2021DC | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
DESCRIPTION
BS616LV2021
• Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3 Brilliance Semiconductor | ||
2 | BS616LV2021DI | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
DESCRIPTION
BS616LV2021
• Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3 Brilliance Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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