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APT8065BVR Electronic Components

N.ºNúmero de piezaDescripciónFabricantesCatagory
1APT8065BVRPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Advanced Power Technology
Advanced Power Technology
mosfet


PDF APT8065BVR Data sheet ( Hoja de datos )






Electronic components

N.ºNúmero de piezaDescripciónFabricantesPDF
1APT8011JFLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
Advanced Power Technology
datasheet APT8011JFLL pdf
2APT8011JLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
Advanced Power Technology
datasheet APT8011JLL pdf
3APT8014JFLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
Advanced Power Technology
datasheet APT8014JFLL pdf
4APT8014JLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
Advanced Power Technology
datasheet APT8014JLL pdf






Featured electronic components

N.ºNúmero de piezaDescripciónFabricantesPDF
1APT8065BVFRPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065BVFR 800V 13A 0.650Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect
Advanced Power Technology
Advanced Power Technology
datasheet APT8065BVFR pdf
2APT8065BVRPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065BVR 800V 13A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packin
Advanced Power Technology
Advanced Power Technology
datasheet APT8065BVR pdf


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Número de pieza Descripción Fabricantes PDF
2SC1815

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request

SEMTECH
Semtech
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