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TSM60N1R4 PDF File ( Datasheet )

Taiwan Semiconductor
TSM60N1R4CH
600V 3.3A Single N-Channel Power MOSFET
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TSM60N1R4 Description
N-Channel Power MOSFET, Transistor

TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 600 1.4 7.7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply ● Lighting Ordering Information Part No. Package Packing TSM60N1R4CH C5G TO-251 75pcs ,

Taiwan Semiconductor
Taiwan Semiconductor




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