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| TSM60N1R4 Description |
| N-Channel Power MOSFET, Transistor
TO-252 (DPAK)
TO-251 (IPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
TSM60N1R4
600V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Key Parameter Performance
Parameter
Value
VDS RDS(on) (max)
Qg
600 1.4 7.7
Unit V Ω nC
Features
● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance
Application
● Power Supply ● Lighting
Ordering Information
Part No.
Package
Packing
TSM60N1R4CH C5G TO-251
75pcs ,
Taiwan Semiconductor |
| Related Part Number |
TSM240N03CX6 | TSM090N08PQ56 TSM1C473F39H3R | TSM126 TSM2C103F34D3R | TSM230N06 |
| DataSheet.es | 2020 | Contacto |