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Datasheet TSM230N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSM230N06   N-Channel Power MOSFET / Transistor

TO-220 TO-252 (DPAK) TSM230N06 60V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 60 23 28 Qg 28 Unit V mΩ nC Features ● 100% avalanche tested ● Fast Switching Ordering Info
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet TSM230N06 pdf

TSM230 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSM2301

20V P-Channel Enhancement Mode MOSFET

TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Features Advanced trench process technology High density cell de
 Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company
TSM2309

P-Channel Power MOSFET

TSM2309 60V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -60 190 240 Qg 8.2 Unit V mΩ nC Ordering Information Part No. Package Packing TSM2309CX RFG SO
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM2307CX

30V P-Channel MOSFET

TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 95 140 Qg 10 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Desi
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor


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Número de pieza Descripción Fabricantes PDF
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