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SI3865BDV PDF File ( Datasheet )

Vishay
SI3865BDV-T1-E3
Mosfet, P-ch, Vdss 1.8 to 8V, Rds(on) 0.045 Ohm, Id +/-2.9A, TSOP-6, Pd 0.83W, Vf -0.77V

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SI3865BDV Description
Load Switch with Level-Shift

Load Switch with Level-Shift Si3865BDV Vishay Siliconix PRODUCT SUMMARY VDS2 (V) RDS(on) ( ) 1.8 to 8 0.060 at VIN = 4.5 V 0.100 at VIN = 2.5 V 0.175 at VIN = 1.8 V ID (A) 2.9 2.2 1.7 DESCRIPTION The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has inter
Vishay Siliconix
Vishay Siliconix



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