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STS9P2UH7 PDF File ( Datasheet )

STMicroelectronics
STS9P2UH7
P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

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STS9P2UH7 Description
P-channel Power MOSFET

STS9P2UH7 P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package Datasheet - production data 5 8 1 SO-8 4 Figure 1: Internal schematic diagram Features Order code STS9P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 9A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Ultra logic level Applications Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction a
STMicroelectronics
STMicroelectronics



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