|
| STS20N3LLH6 Description |
| N-channel MOSFET
STS20N3LLH6
N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STS20N3LLH6
30 V 0.0047 Ω 20 A
t(s)- RDS(on) * Qg industry benchmark uc- Extremely low on-resistance RDS(on) d- High avalanche ruggedness ro- Low gate drive power losses P- Very low switching gate charge
leteApplication
so- Switching applications
- ObDescription t(s)This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ techn
STMicroelectronics |
| Related Part Number |
STS6P3LLH6 | STSPIN240 STS12N3LLH5 | STS9P2UH7 STS20T10 | STS7P4LLF6 |
| DataSheet.es | 2020 | Contacto |