SI3585DV PDF File ( Datasheet )

Si3585DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.125 at VGS = 4.5 V 0.200 at VGS = 2.5 V P-Channel - 20 0.200 at VGS = - 4.5 V 0.340 at VGS = - 2.5 V ID (A) 2.4 1.8 - 1.8 - 1.2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002, 95, EC G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 2.85 mm Ordering Information: Si3585DV-T1-E3 (Lead (Pb)-free) Si3

Si3585DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V 0.200 @ VGS = 4.5 V ID (A) 2.4 1.8 1.8 1.2 P-Channel 20 0.340 @ VGS = 2.5 V D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C