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| SI3460DV Description |
| N-Channel 20-V (D-S) MOSFET
Si3460DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (A)
6.8 6.3 5.7
rDS(on) (W)
0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V
D TrenchFETr Power MOSFET D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C
Vishay Siliconix |
| N-Channel 20-V (D-S) MOSFET
Si3460DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (A)
6.8 6.3 5.7
rDS(on) (W)
0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V
D TrenchFETr Power MOSFET D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C
Vishay Siliconix |
| Related Part Number |
SI3443DDV | Si3993DV SI3429EDV | SI3493DDV SI3443DV | Si3585DV |
| DataSheet.es | 2020 | Contacto |