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SI3447DV PDF File ( Datasheet )

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SI3447DV
Power Field-Effect Transistor, 5.5A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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SI3447DV Description
P-Channel 1.8V Specified PowerTrench MOSFET

Si3447DV April 2001 Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features 5.5 A, 20 V. RDS(ON) = 33 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V RDS(ON) = 60 mΩ @ VGS = 1.8 V Applications Battery management Load switch Battery protection Fast switching speed. High performance trench technology
Fairchild Semiconductor
Fairchild Semiconductor



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