SI3420DV PDF File ( Datasheet )

Si3420DV Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES ID (A) 0.5 PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 3.7 @ VGS = 10 V D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avala