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NE960R2 PDF File ( Datasheet )

NEC
NE960R275
RF Power Field-Effect Transistor, 1-Element, KU Band, N-Channel, Metal Semiconductor FET
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NE960R2 Description
0.2 W X / Ku-BAND POWER GaAs MES FET

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available i

NEC
NEC
0.2 W X / Ku-BAND POWER GaAs MES FET

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available i

NEC
NEC




Related Part Number

NE944  |  NE961R200  

NE9000xx  |  NE960R275  

NE97833  |  NE94430  



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