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Datasheet NE961R200 Equivalent ( PDF ) |
| P/N | Descripción | Fabr. | |
| NE961R200 | 0.2 W X / Ku-BAND POWER GaAs MES FET PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver ampl
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NE96 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| NE960R2 | 0.2 W X / Ku-BAND POWER GaAs MES FET
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| NE960R200 | 0.2 W X / Ku-BAND POWER GaAs MES FET
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| NE960R275 | 0.2 W X / Ku-BAND POWER GaAs MES FET
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| NE960R5 | 0.5 W X / Ku-BAND POWER GaAs MES FET
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| NE960R500 | 0.5 W X / Ku-BAND POWER GaAs MES FET
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| NE555D | Single Bipolar Timer
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| NE5534N | Dual and Single Low Noise OP AMP
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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