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| NE8500200 Description |
| 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GH- frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device ha
NEC |
| Related Part Number |
NE85633 | NE856M03 NE83C92 | NE8500295-6 NE85618 | NE85635 |
| DataSheet.es | 2020 | Contacto |