|
MMBT5551LT1 PDF File ( Datasheet )
onsemi
MMBT5551LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Future Electronics | 17,268,000 | Visit Site | |||
| Avnet | 66,000 | Visit Site | |||
| Newark | 128,439 | 0.156 | Visit Site | ||
| Master Electronics | 12,000 | Visit Site | |||
| Onlinecomponents.com | 12,000 | Visit Site | |||
| Rochester Electronics | 20,840 | Visit Site | |||
| Arrow Electronics | 129 | 0.1482 | Visit Site | ||
Powered by Octopart | |||||
| MMBT5551LT1 Description |
| TRANSISTOR
RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o)
.,LTDCollector-Emiller Voltage:VCEO=160V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
O Unit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base Voltage Collector-Emitter Voltage
NEmitter-Base Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
180
 WEJ |
| NPN EPITAXIAL PLANAR TRANSISTOR
TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature..................................................................................................-55+150°C Junction Temperature............... ............................................................ ..........+150°C Maximum
Maximum Power Dissipa
 TGS |
| Related Part Number |
MMBV432LT1 | MMBZ5256C MMBD352WT1G | MMB8G MMBFU310 | MMBD2838 |
| DataSheet.es | 2020 | Contacto |