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| IRLML6402 Description |
| HEXFET Power MOSFET
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching
G1 S2
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device
International Rectifier |
| HEXFET Power MOSFET
IRLML6402PbF
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
G1 S2
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides th
International Rectifier |
| Related Part Number |
IRL630S | IRL610 IRL520S | IRL640 IRL510 | IRL1104S |
| DataSheet.es | 2020 | Contacto |