|
|
Datasheet IRL510 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRL510 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRL510
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω ( |
 Fairchild Semiconductor |
 |
| 5 | IRL510 | HEXFET Power MOSFET |
 International Rectifier |
|
| 4 | IRL510 | Power MOSFET ( Transistor ) Power MOSFET
IRL510, SiHL510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
6.1
Qgs (nC)
2.6
Qgd (nC)
3.3
Configuration
Single
0.54
TO-220AB
D
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt |
 Vishay Siliconix |
|
| 3 | IRL510A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)
IR |
 Fairchild |
|
| Esta página es del resultado de búsqueda del IRL510. Si pulsa el resultado de búsqueda de IRL510 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1] [2]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |