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IRL520NS PDF File ( Datasheet )
Infineon
IRL520NSTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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| IRL520NS Description |
| (IRL520NS/L) HEXFET Power MOSFET
PD - 91534
IRL520NS, L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.18Ω
G
ID = 10A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s
 International Rectifier |
| Power MOSFET, Transistor
Lead-Free
PD- 95592
IRL520NSPbF IRL520NLPbF
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Peak Diode Recovery dv, dt Test Circuit
+ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
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dv, dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
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* Re
International Rectifier |
| Related Part Number |
IRL530 | IRL630 IRL510 | IRL1104S IRL620S | IRLU210A |
| DataSheet.es | 2020 | Contacto |