|
| IRL510S Description |
| HEXFET POWER MOSFET
IRF |
| Power MOSFET, Transistor
Power MOSFET
IRL510S, SiHL510S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC)
100 VGS = 5 V
6.1
Qgs (nC)
2.6
Qgd (nC)
3.3
Configuration
Single
0.54
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition Surface Mount Available in Tape and Reel Dynamic dV, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Compliant to RoHS Di
Vishay |
| Related Part Number |
IRL510 | IRL1104S IRL620S | IRLU210A IRL530 | IRL630 |
| DataSheet.es | 2020 | Contacto |