|
| IRFP4768PBF Description |
| MOSFET, Transistor
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
G
Benefits Improved Gate, Avalanche and Dynamic dV, dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV, dt and dI, dt Capability Lead-Free, RoHS Compliant
IRFP4768PbF
HEXFET® Power MOSFET
D VDSS 250V
RDS(on) typ.
14.5m
max 17.5m
ID
S
93A
D
G DS
TO-247AC
G
Gate
D
Drai
Infineon |
| Power MOSFET, Transistor
PD - 97379
IRFP4768PbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV, dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV, dt and dI, dt Capability l Lead-Free
D
G S
VDSS RDS(on) typ. max. ID
250V 14.5mΩ 17.5mΩ 93A
D
G
D
S
TO-247AC
G
D
S
Gate
Drai
International Rectifier |
| Related Part Number |
IRF6795MTRPbF | IRF256 IRF342 | IRFR210A IRFIZ34NPBF | IRFP460LC |
| DataSheet.es | 2020 | Contacto |