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IRFIZ44NPBF PDF File ( Datasheet )

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IRFIZ44NPBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.024Ohm; ID 31A; TO-220 Full-Pak; PD 45W; -55de

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IRFIZ44NPBF Description
HEXFET Power MOSFET

PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.024Ω D G S ID = 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design
International Rectifier
International Rectifier



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