Datasheet IRF820 Equivalent ( PDF ) - Gate

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF820 DESCRIPTION ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements APPLICATIONS ·High current,high speed switching · Swith mode power supplies(smps) ·DC-AC converters for weld

® IRF820 N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220 PowerMESH™ MOSFET TYPE IRF820 s s s s s V DSS 500 V R DS(on) < 3Ω ID 2.5 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators