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IRF5800 PDF File ( Datasheet )

Infineon
IRF5800TRPBF
Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.085 Ohm; Id -4A; TSOP-6; Pd 2W; Vgs +/-20V; -55
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IRF5800 Description
Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)

PD - 93850 IRF5800 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S RDS(on) = 0.085Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load manag

International Rectifier
International Rectifier
Power MOSFET, Transistor

PD - 96029 IRF5800PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S RDS(on) = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and

International Rectifier
International Rectifier




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