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| IRF5800 Description |
| Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)
PD - 93850
IRF5800
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
D
1
6
A D
VDSS = -30V
D
2 5
D
G
3
4
S
RDS(on) = 0.085Ω
T o p V ie w
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load manag
International Rectifier |
| Power MOSFET, Transistor
PD - 96029
IRF5800PbF
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free
D
1
6
A D
VDSS = -30V
D
2 5
D
G
3
4
S
RDS(on) = 0.085Ω
Top View
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and
International Rectifier |
| Related Part Number |
IRFD120 | IRF421 IRF353 | IRFU3710Z-701PbF IRFR330 | IRFSZ44A |
| DataSheet.es | 2020 | Contacto |