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IRFD120 |
Power MOSFET, Transistor
Power MOSFET
IRFD120, SiHFD120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Single
D
0.27
HVMDIP
S G
D
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 °C Operating Temperature Fas
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1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET
IRFD120
Data Sheet July 1999 File Number
2315.3
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power eld effect transistors designed for applications such as switching regulators, switching convertors
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Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A)
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N-Channel Power MOSFET, Transistor
IRFD120
Data Sheet January 2002
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power eld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers,
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(IRFD123) N-Channle Enhancement Mode Transistors
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