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| IRF1407SPBF Description |
| Power MOSFET, Transistor
IRF1407SPbF IRF1407LPbF
Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
Infineon |
| Power MOSFETs
PD -95486
IRF1407SPbF
Benefits O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv, dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free Description Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs a
International Rectifier |
| Related Part Number |
IRF840S | IRF730PBF IRFP460LC | IRF7406TRPBF-1 IRFR034A | IRFP442R |
| DataSheet.es | 2020 | Contacto |