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| GTT2605 Description |
| P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006, 03, 28 REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -4.0A
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2605 is universally used for all commercial-industrial applications.
Description
*Fast Switching Characteristic *Lower Gate Charge *Small Footprint & Low Profile Package
Features
Package Di
GTM |
| Related Part Number |
GTTY43SP7F1R0 | GTT2610 GTT8209E | GTT3455 GTT2623 | GTTQ57SN761E0 |
| DataSheet.es | 2020 | Contacto |