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Datasheet GTT2610 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| GTT2610 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006, 06, 13 REVISED DATE :
GTT2610
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 90m 3A
The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2610 is universally used for all commercial-industrial applications.
Description
Features
*Sim
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GTT2 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| GTT2602 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| GTT2603 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| GTT2604 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| GTT2605 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| GTT2623 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| GTN01-12 | 1200V / Thyristor
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| GT30F124 | N-Channel IGBT ( 300V / 200A / TO-220SIS )
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| Esta página es del resultado de búsqueda del GTT2610. Si pulsa el resultado de búsqueda de GTT2610 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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