C5909 PDF File ( Datasheet )

Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ - Features (2.0) High breakdown voltage: VCBO ≥ 1 500 V High-speed switching: tf < 200 ns Wide safe operation area 26.5±0.5 (23.4) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ - Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B