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Datasheet C5988 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | BUY |
| C5988 | Silicon NPN transistor epitaxial type C5988
Silicon NPN transistor epitaxial type C5988
[ Applications ] High current amplifier
[ Feature ] Collector current IC= 6A Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA Exellent gain characteristics specified up to 10 ampers PNP complementary pair with A5988
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base vol
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C59 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| C5902 | NPN Transistor, 2SC5902
Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
High breakdown voltage: VCBO ≥ 1 700 V Wide safe operation area Built-in dumper diode
26.5±0.5
(23.4)
(2.0)
5˚ (4
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| C5904 | NPN Transistor, 2SC5904
Power Transistors
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
- Features
High breakdown voltage (VCBO ≥ 1 700 V) High-speed switching (tf < 200 nsec) Wide safe operation area
26.5±0.5
3.
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| C5905 | NPN Transistor, 2SC5905
Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
High breakdown voltage: VCBO ≥ 1 700 V High-speed switching: tf < 200 ns Wide safe operation area
26.5�
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| C5906 | Silicon NPN Epitaxial Type Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5906
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: t
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| C5906 | Silicon NPN transistor
Silicon NPN transistor epitaxial type C5906
C5906
[ Applications ] High voltage, High current
[ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC, IB= 2A, 200mA Fast-switching speed
[ Absolute maximum ratings (T
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| C5909 | NPN Transistor, 2SC5909
Power Transistors
2SC5909
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
(2.0)
High breakdown voltage: VCBO ≥ 1 500 V High-speed switching: tf < 200 ns Wide safe operation area
26.5±0.5
(
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| C5914 | NPN Transistor, 2SC5914
Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
High breakdown voltage: VCBO ≥ 1 500 V High-speed switching: tf < 200 ns Wide safe operation area
26.5�
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