2SD1475 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1475 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continu

Power Transistors 2SD1475 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 8 4 1 35 2 150 55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3