1SS413 PDF File ( Datasheet )

1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM Ptot TJ Ts Value 25 20 100 50 1 100 125 - 55 to + 125 Unit

Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2002-11 1 2014-07-09 Rev.3.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Po