Datasheet 1SS413CT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	1SS413CT	Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit 1SS413CT CST2 1: C	Toshiba

1SS41 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
1SS412	Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.0 V (typ.) : IR = 0.1 nA (typ.) : CT = 3.0 pF (typ.) : SC-70 Absolute Maxi	Toshiba
1SS417	Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 1SS417 High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.56V (typ.) • Low reverse current: IR = 5μA (Max.) 0.1 0.6±0.05 Unit: mm A CATHODE MARK 1.0±0.05 0.8±0.05 Absol	Toshiba
1SS413	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse V	SEMTECH

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Número de pieza	Descripción	Fabricantes	PDF
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