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SPB80N06S2L-09 Datasheet PDF |
PDF SPB80N06S2L-09 Transistor ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| SPB80N06S2L-09 | OptiMOS Power-Transistor
SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO263 -3-2
55 8.5 80
P- TO220 -3-1
V mΩ A
Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv, dt rated
Type SPP80N06S2L-09 SPB80N06S2L-09
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6031 Q67060-S6032
Marking 2N06L09 2N06L09
Maximum R
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| SPB80N06S2L-09 | Power-Transistor
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Electronic components |
| P/N | Descripción | Fabr. | |
| SPB80N06S2L-H5 | OptiMOS Power-Transistor SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO263 -3-2
55 5 80
P- TO220 -3-1
V mΩ A
Enhancement mode 175°C operating tempera | ![]() | ![]() |
| SPB80N06S2L-05 | OptiMOS Power-Transistor SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05
OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
55 4.5 80
P- TO220 -3-1
V m� | ![]() | ![]() |
| SPB80N06S2L-06 | OptiMOS Power-Transistor | ![]() | ![]() |
| SPB80N06S2L-07 | OptiMOS Power-Transistor | ![]() | ![]() |
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- Features
SIP8 package with industry standard pinout 4:1 ultrawide input range Operating temperature range -40 ~ +85℃ No minimum loa | ![]() | |
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Features
Bluetooth v4.1 compliant Supports master and slave modes Multiple roles supported simultaneously
Embedded Bluetooth low energy | ![]() | |
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| SPB15-10 | Diode, Rectifier | ![]() |
| Esta es una página para buscar información de compra e inventario para SPB80N06S2L-09. Para productos compatibles y de reemplazo con SPB80N06S2L-09, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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