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| SPB80N06S2L-09 Description |
| OptiMOS Power-Transistor
SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO263 -3-2
55 8.5 80
P- TO220 -3-1
V mΩ A
Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv, dt rated
Type SPP80N06S2L-09 SPB80N06S2L-09
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6031 Q67060-S6032
Marking 2N06L09 2N06L09
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=2
Infineon Technologies |
| Power-Transistor
SPP80N06S2L-09 SPB80N06S2L-09
Product Summary VDS R DS(on) ID
P- TO263 -3-2
OptiMOS® Power-Transistor
Feature
N-Channel
55 8.5 80
P- TO220 -3-1
V mΩ A
Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv, dt rated
Type SPP80N06S2L-09 SPB80N06S2L-09
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6031 Q67060-S6032
Marking 2N06L09 2N06L09
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC
Infineon Technologies |
| Related Part Number |
SPB15-04W | SPB62 SPB15-01W | SPB15-08W SPB605 | SPB15-10 |
| DataSheet.es | 2020 | Contacto |