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SPB80N06S2L-09 PDF File ( Datasheet )

VBsemi
SPB80N06S2L-09-VB
N, 60V, 150A, Rds(on), 4M¦¸@10V, 20VGS(¡ÀV), 3VTH(V) , TO263, Mosfet
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SPB80N06S2L-09 Description
OptiMOS Power-Transistor

SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 8.5 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv, dt rated Type SPP80N06S2L-09 SPB80N06S2L-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6031 Q67060-S6032 Marking 2N06L09 2N06L09 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=2

Infineon Technologies
Infineon Technologies
Power-Transistor

SPP80N06S2L-09 SPB80N06S2L-09 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature N-Channel 55 8.5 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv, dt rated Type SPP80N06S2L-09 SPB80N06S2L-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6031 Q67060-S6032 Marking 2N06L09 2N06L09 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC

Infineon Technologies
Infineon Technologies




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SPB605  |  SPB15-10  



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