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ASB0320 Datasheet PDF |
PDF ASB0320 Diode ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| ASB0320 | SMD Schottky Barrier Diode
ASB0320, 30, 40
SMD Schottky Barrier Diode Features
IO = 350mA
VR = 20V to 40V
- Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device
0.010(0.25)Typ. 0.033(0.85) 0.027(0.70)
General Description
0603(1608)
0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80)
0.012(0.30)Typ.
0.014(0.35)Typ. Dimensions in inches and (m
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Electronic components |
| P/N | Descripción | Fabr. | |
| ASB0330 | SMD Schottky Barrier Diode ASB0320, 30, 40
SMD Schottky Barrier Diode Features
IO = 350mA
VR = 20V to 40V
- Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. | ![]() | ![]() |
| ASB0340 | SMD Schottky Barrier Diode ASB0320, 30, 40
SMD Schottky Barrier Diode Features
IO = 350mA
VR = 20V to 40V
- Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. | ![]() | ![]() |
Componentes electrónicos recomendados |
| P/N | Descripción | Fabr. | |
| ASB408L | 4 Amps Silicon Bridge Rectifiers DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRSB-400-1C ABSB-400-1C
FEATURES
VOID FREE VACUUM DIE SOLDERING FO | ![]() | |
| ASB406L | 4 Amps Silicon Bridge Rectifiers DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRSB-400-1C ABSB-400-1C
FEATURES
VOID FREE VACUUM DIE SOLDERING FO | ![]() | |
| ASB404L | 4 Amps Silicon Bridge Rectifiers | ![]() | |
| ASB0520 | SMD Schottky Barrier Diode | ![]() |
| Esta es una página para buscar información de compra e inventario para ASB0320. Para productos compatibles y de reemplazo con ASB0320, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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