ASAT15 Datasheet PDF

ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Omnigold™ Metalization System D C L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O K 3.0 A 45 V 15 V 3.0 V 37.2 W -65 OC to +200 OC -65 C to +150 C 4.7 OC, W O DIM A B C D E F G H I J K L M MINIM

ASAT25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT25 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Omnigold™ Metalization System

ASAT30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT30 is Designed for D C L B PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Omnigold™ Metalization

ASA306B ASA306B Data Sheet 50 ~ 1200 MH- Gain Adjustable Trans-impedance Amplifier MMIC 1. Product Overview 1.1 General Description ASA306B, a trans-impedance amplifier (TIA) with voltage controlled a

ASA303A versionㅇ1. ASA303A Data Sheet 50 ~ 1200 MH- Gain Adjustable Trans-impedance Amplifier MMIC 1. Product Overview 1.1 General Description ASA303A, a trans-impedance amplifier (TIA) with voltage