ASAT10 Datasheet PDF

ASAT10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Input Matching Network Omnigold™ Metalization System D C L B M F E G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O H I J K 2.3 A DIM MINIMUM inches , mm MAXIMUM inches , mm 45 V 15 V 3.5 V 29 W @ TC = 25 C -65

ASAT30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT30 is Designed for D C L B PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Omnigold™ Metalization

ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Omnigold™ Metalization System

ASA306B ASA306B Data Sheet 50 ~ 1200 MH- Gain Adjustable Trans-impedance Amplifier MMIC 1. Product Overview 1.1 General Description ASA306B, a trans-impedance amplifier (TIA) with voltage controlled a

ASA303A versionㅇ1. ASA303A Data Sheet 50 ~ 1200 MH- Gain Adjustable Trans-impedance Amplifier MMIC 1. Product Overview 1.1 General Description ASA303A, a trans-impedance amplifier (TIA) with voltage