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2SJ409S Datasheet PDF

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VBsemi 2SJ409S-VB
TO263, P, VDS=-100V, Id =-37A, RDS(ON)=40M¦¸@VGS=10V, RDS(ON)=50M¦¸@VGS=4.5V, VGS=¡À20V, VTH=-2V


PDF 2SJ409S ( Hoja de datos )

P/N Descripción Fabr. PDF
2SJ409S Silicon P-Channel MOS FET

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ409(L), 2SJ409(S) Absolute Maximum Ratings (Ta = 25°C)
Hitachi Semiconductordatasheet 2SJ409S pdf


2SJ409S PDF Descargar


Silicon P-Channel MOS FET

datasheet 2SJ409S download

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Electronic components

P/N Descripción Fabr. PDF
2SJ409Silicon P-Channel MOS FET

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from
Hitachi Semiconductor
datasheet 2SJ409 pdf
2SJ401P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba Semiconductor
datasheet 2SJ401 pdf
2SJ402P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba Semiconductor
datasheet 2SJ402 pdf
2SJ409LSilicon P-Channel MOS FET

Hitachi Semiconductor
datasheet 2SJ409L pdf

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P/NDescripciónFabr.PDF
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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
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datasheet 2SC1815 pdf


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