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2SJ409S PDF File ( Datasheet )

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2SJ409S-VB
TO263, P, VDS=-100V, Id =-37A, RDS(ON)=40M¦¸@VGS=10V, RDS(ON)=50M¦¸@VGS=4.5V, VGS=¡À20V, VTH=-2V
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2SJ409S Description
Silicon P-Channel MOS FET

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ409(L), 2SJ409(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain

Hitachi Semiconductor
Hitachi Semiconductor




Related Part Number

2SJ170  |  2SJ126  

2SJ358C  |  2SJ374  

2SJ171  |  2SJ72  



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