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2SC3356W Datasheet PDF

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Leshan Radio Co. L2SC3356WT1G
1uA 12V 150mW 170@10mA, 3V 100mA 7GHz NPN +150℃@(Tj) SC-70-3 Bipolar Transistors - BJT ROHS


PDF 2SC3356W Transistor ( Hoja de datos )

P/N Descripción Fabr. PDF
2SC3356W Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES - Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS - NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC3356W Marking R23, R24, R25 Package Code SOT
Galaxy Semi-Conductor Holdings Limiteddatasheet 2SC3356W pdf


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Silicon Epitaxial Planar Transistor

datasheet 2SC3356W download

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Electronic components

P/N Descripción Fabr. PDF
2SC335612V / 100mA / NPN TRANSISTOR

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. Low Noise and High Gain
NEC
datasheet 2SC3356 pdf
2SC3352SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3352 DESCRIPTION ·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switchin
SavantIC
datasheet 2SC3352 pdf
2SC3359SPower Transistor

ROHM Semiconductor
datasheet 2SC3359S pdf
2SC3356FNPN Silicon Plastic Encapsulated Transistor

SeCoS Halbleitertechnologie GmbH
datasheet 2SC3356F pdf

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P/NDescripciónFabr.PDF
2SC276218V, 0.4A, NPN Transistor, Can type

Medium power output, Pout = 1.4 W TYP. @f = 500 MHz, Vcc = 12.6 V, Pin = 0.25 W
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Switching Regulator Applications
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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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