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2SC3356W Datasheet PDF |
PDF 2SC3356W Transistor ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| 2SC3356W | Silicon Epitaxial Planar Transistor
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
- Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz
Production specification
2SC3356W
Pb
Lead-free
z
High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz
APPLICATIONS
- NPN Silicon Epitaxial Planar Transistor. SOT-323
ORDERING INFORMATION
Type No. 2SC3356W Marking R23, R24, R25 Package Code SOT
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| P/N | Descripción | Fabr. | |
| 2SC3356 | 12V / 100mA / NPN TRANSISTOR The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. Low Noise and High Gain | ![]() | ![]() |
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Product Specification
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2SC3352
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| Esta es una página para buscar información de compra e inventario para 2SC3356W. Para productos compatibles y de reemplazo con 2SC3356W, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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