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2SC3356W PDF File ( Datasheet )

Leshan Radio Co.
L2SC3356WT1G
1uA 12V 150mW 170@10mA, 3V 100mA 7GHz NPN +150℃@(Tj) SC-70-3 Bipolar Transistors - BJT ROHS
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2SC3356W Description
Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES - Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS - NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC3356W Marking R23, R24, R25 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Param

Galaxy Semi-Conductor Holdings Limited
Galaxy Semi-Conductor Holdings Limited




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