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| 2SC3356W Description |
| Silicon Epitaxial Planar Transistor
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
- Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz
Production specification
2SC3356W
Pb
Lead-free
z
High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz
APPLICATIONS
- NPN Silicon Epitaxial Planar Transistor. SOT-323
ORDERING INFORMATION
Type No. 2SC3356W Marking R23, R24, R25 Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Param
Galaxy Semi-Conductor Holdings Limited |
| Related Part Number |
2SC3440-HF | 2SCR542PFRA 2SC1400 | 2SCR552P5 2SCR512P | 2SC5343Q |
| DataSheet.es | 2020 | Contacto |