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2SC2808 Datasheet PDF |
PDF 2SC2808 Transistor ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| 2SC2808 | Epitaxial Planar NPN Silicon Transistor
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Electronic components |
| P/N | Descripción | Fabr. | |
| 2SC2812 | Silicon Epitaxial Planar Transistor Production specification
Silicon Epitaxial Planar Transistor
FEATURES
- High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).
- High Voltage:VCEO=50V.
Pb
Lead-free
2SC2812
APPLICATIONS
- NPN Silic | ![]() | ![]() |
| 2SC2880 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC2880
2SC2880
High Voltage Switching Applications
· High voltage: VCEO = 150 V · High transition frequency: fT = 120 MH- · Sma | ![]() | |
| 2SC2831A | Si NPN Triple Diffused Junction Mesa | ![]() | ![]() |
| 2SC2884 | Silicon NPN Epitaxial Type TRANSISTOR | ![]() |
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| Esta es una página para buscar información de compra e inventario para 2SC2808. Para productos compatibles y de reemplazo con 2SC2808, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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