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PDF STWA48N60M2 Data sheet ( Hoja de datos )

Número de pieza STWA48N60M2
Descripción N-Channel Power MOSFET / Transistor
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STWA48N60M2 Hoja de datos, Descripción, Manual

STWA48N60M2
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2
Power MOSFET in a TO-247 long leads package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STWA48N60M2
VDS @ TJmax
650 V
RDS(on) max
0.07 Ω
ID
42 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STWA48N60M2
Table 1: Device summary
Marking
Package
48N60M2
TO-247 long leads
Packaging
Tube
December 2015
DocID028710 Rev 1
This is information on a product in full production.
1/12
www.st.com

1 page




STWA48N60M2 pdf
STWA48N60M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0, ISD = 21 A
ISD = 42 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17:
"Unclamped inductive load test
circuit")
- 42 A
- 168 A
- 1.6 V
- 487
ns
- 9.1
µC
- 37.5
A
trr Reverse recovery time
ISD = 42 A, di/dt = 100 A/µs
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C
(see Figure 17: "Unclamped
IRRM Reverse recovery current inductive load test circuit")
- 605
- 12.5
- 41.5
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID028710 Rev 1
5/12

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STWA48N60M2 arduino
STWA48N60M2
Revision history
5 Revision history
Date
01-Dec-2015
Table 10: Document revision history
Revision
Changes
1 First release.
DocID028710 Rev 1
11/12

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